Unintentionally doped InN grown onto an atomically flat AlN intermediate layer using plasma-assisted molecular beam epitaxy
نویسندگان
چکیده
1 Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, R.O.C. 2 Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.C. 3 Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan, R.O.C. 4 Material Science Center, National Tsing Hua University, Hsinchu, Taiwan, R.O.C.
منابع مشابه
Composition and luminescence of AlInGaN layers grown by plasma-assisted molecular beam epitaxy
A study of AlInGaN epilayers, grown by plasma-assisted molecular beam epitaxy, was performed using spatially resolved x-ray microanalysis and luminescence spectroscopy in order to investigate competition between the incorporation of In, Al, and Ga as a function of the growth temperature in the 565–660 °C range and the nominal AlN mole fraction. The samples studied have AlN and InN mole fraction...
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